onsemi BSS138L Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 BSS138LT3G
- RS-stocknr.:
- 690-0136
- Fabrikantnummer:
- BSS138LT3G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 4,025
(excl. BTW)
€ 4,875
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tekort aan aanbod
Wegens beperkingen in de bevoorradingsketen worden de voorraden toegewezen naarmate zij beschikbaar komen.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,161 | € 4,03 |
| 250 - 1225 | € 0,039 | € 0,98 |
| 1250 - 2475 | € 0,039 | € 0,98 |
| 2500 - 12475 | € 0,038 | € 0,95 |
| 12500 + | € 0,037 | € 0,93 |
*prijsindicatie
- RS-stocknr.:
- 690-0136
- Fabrikantnummer:
- BSS138LT3G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS138L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 225mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.94mm | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS138L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 225mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.94mm | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 50V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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