Vishay IRFU Type N-Channel MOSFET, 4.3 A, 100 V Enhancement, 3-Pin IPAK (TO-251) IRFU110PBF
- RS-stocknr.:
- 708-4831
- Fabrikantnummer:
- IRFU110PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 8,07
(excl. BTW)
€ 9,76
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 40 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 2.940 stuk(s) vanaf 04 september 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,807 | € 8,07 |
| 100 - 240 | € 0,728 | € 7,28 |
| 250 - 490 | € 0,671 | € 6,71 |
| 500 - 990 | € 0,629 | € 6,29 |
| 1000 + | € 0,525 | € 5,25 |
*prijsindicatie
- RS-stocknr.:
- 708-4831
- Fabrikantnummer:
- IRFU110PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | IPAK (TO-251) | |
| Series | IRFU | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.54Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 100V | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.38mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type IPAK (TO-251) | ||
Series IRFU | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.54Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 100V | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Width 2.38mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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