Infineon HEXFET Type N-Channel MOSFET, 62 A, 30 V Enhancement, 3-Pin TO-220 IRLB8721PBF

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RS-stocknr.:
725-9322
Fabrikantnummer:
IRLB8721PBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.6nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

4.83 mm

Length

10.67mm

Standards/Approvals

No

Height

9.02mm

Automotive Standard

No

Distrelec Product Id

304-45-324

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF


This MOSFET is a high-performance switching device tailored for various applications in electronics and automation. With a robust TO-220AB package, it features a continuous drain current capacity of 62A and can handle a maximum drain-source voltage of 30V. The device operates efficiently across a wide temperature range from -55°C to +175°C, making it suitable for demanding environments.

Features & Benefits


• Supports high frequency synchronous buck converters

• Engineered for high current use efficiently

• Fully characterised for avalanche voltage and current

• Minimal gate charge enhances switching performance

• Versatile mounting options simplify integration into designs

Applications


• Used in UPS and inverter systems

• Effective in high-frequency isolated DC-DC converters

• Suitable for synchronous rectification in industrial solutions

• Key component in computer processor power supplies

What is the significance of the device's low Rds(on)?


The low Rds(on) significantly lowers conduction losses, improving overall efficiency in power conversion applications, which is crucial for maintaining performance in high current operations.

How does the maximum gate threshold voltage affect device performance?


The gate threshold voltage range of 1.35V to 2.35V ensures the device can be reliably controlled in various applications, providing flexibility in integration with different drive circuits.

What considerations should be made for thermal management in applications?


Given the maximum power dissipation of 65W, appropriate thermal management strategies must be implemented, such as using a suitable heatsink, to prevent overheating and ensure reliable operation.

Can this MOSFET be used in automotive applications?


Yes, it is designed to operate effectively in high-temperature environments, making it suitable for automotive applications where thermal variability is a concern.

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