Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF
- RS-stocknr.:
- 725-9341
- Fabrikantnummer:
- IRLML0060TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 4,48
(excl. BTW)
€ 5,42
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 6.460 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 73.380 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,224 | € 4,48 |
| 200 - 480 | € 0,168 | € 3,36 |
| 500 - 980 | € 0,157 | € 3,14 |
| 1000 - 1980 | € 0,146 | € 2,92 |
| 2000 + | € 0,135 | € 2,70 |
*prijsindicatie
- RS-stocknr.:
- 725-9341
- Fabrikantnummer:
- IRLML0060TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 92mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.5nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 92mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.5nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin SOT-23 IRLML0060TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML2030TRPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin SOT-23 IRLML2060TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V, 3-Pin SOT-23 IRLML6246TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML6346TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML6344TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML0030TRPBF
- Infineon HEXFET N-Channel MOSFET 25 V, 3-Pin SOT-23 IRFML8244TRPBF
