Infineon HEXFET N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2030TRPBF
- RS-stocknr.:
- 725-9353
- Artikelnummer Distrelec:
- 304-45-312
- Fabrikantnummer:
- IRLML2030TRPBF
- Fabrikant:
- Infineon
Subtotaal (20 eenheden, in een pakket van 20)*
€ 5,40
(excl. BTW)
€ 6,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- 240 resterend, klaar voor verzending
- 780 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,27 | € 5,40 |
| 200 - 480 | € 0,14 | € 2,80 |
| 500 - 980 | € 0,132 | € 2,64 |
| 1000 - 1980 | € 0,124 | € 2,48 |
| 2000 + | € 0,114 | € 2,28 |
*prijsindicatie
- RS-stocknr.:
- 725-9353
- Artikelnummer Distrelec:
- 304-45-312
- Fabrikantnummer:
- IRLML2030TRPBF
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 100mΩ Maximum Drain Source Resistance - IRLML2030TRPBF
Features and Benefits:
• 30V drain-source rating permits moderate-voltage switching
• Continuous drain current 2.7A supports sustained load operation
• Low gate charge 1nC enables fast, efficient switching
• Maximum power dissipation 1.3W allows thermal budgeting
• Gate-source withstand 20V provides input margin for drivers
Applications
• Ideal for portable device power-management stages
• Used with DC-DC converters in small SMD designs
• Can be used for LED drivers and small motor control
• Suitable for signal-level switching in consumer electronics
What thermal range can it operate within?
How is it packaged for PCB assembly?
What electrical role does the device serve in switching designs?
How small is the component footprint for layout planning?
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- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
