Infineon SIPMOS Type N-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223 BSP318SH6327XTSA1

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Verpakkingsopties
RS-stocknr.:
753-2816
Fabrikantnummer:
BSP318SH6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.8W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.6mm

Width

3.5 mm

Length

6.5mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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