Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- RS-stocknr.:
- 753-2857
- Fabrikantnummer:
- BSS83PH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 8,90
(excl. BTW)
€ 10,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 500 stuk(s) vanaf 01 juni 2026
- Plus verzending 35.550 stuk(s) vanaf 08 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 200 | € 0,178 | € 8,90 |
| 250 - 450 | € 0,121 | € 6,05 |
| 500 - 1200 | € 0,114 | € 5,70 |
| 1250 - 2450 | € 0,105 | € 5,25 |
| 2500 + | € 0,08 | € 4,00 |
*prijsindicatie
- RS-stocknr.:
- 753-2857
- Fabrikantnummer:
- BSS83PH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 330mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.38nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 330mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.38nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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