Infineon SIPMOS Type P-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2

RS-stocknr.:: 892-2217
Fabrikantnummer:: BSS84PH6327XTSA2
Fabrikant:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2

Subtotaal (1 verpakking van 250 eenheden)*

€ 27,50

(excl. BTW)

€ 32,50

(incl. BTW)

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Plus verzending 1.000 stuk(s) vanaf 02 november 2026
Plus verzending 250 stuk(s) vanaf 02 november 2026
Plus verzending 18.000 stuk(s) vanaf 31 december 2026

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Aantal stuks	Per stuk	Per verpakking*
250 +	€ 0,11	€ 27,50

*prijsindicatie

RS-stocknr.:: 892-2217
Fabrikantnummer:: BSS84PH6327XTSA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	170mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	360mW
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.24V
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Width	1.3mm
	Standards/Approvals	No
	Height	900μm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 170mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 360mW
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.24V
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Width 1.3mm
	Standards/Approvals No
	Height 900μm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 170mA Continuous Drain Current - BSS84PH6327XTSA2

This MOSFET is a P-channel transistor intended for low-power switching in surface-mounted electronic assemblies. It operates across a wide temperature span suitable for challenging environments and is designed for compact board-level installations where a P-channel device with moderate voltage rating is required.

Features and Benefits:

• 60V drain withstand provides high-voltage switching capability
• 12Ω RDS(on) enables controlled conduction for low-current paths
• 1nC typical gate charge reduces drive energy and switching losses
• 170mA continuous drain current supports sustained low-current loads
• 360mW maximum dissipation permits modest power handling in small packages

Applications

• Suitable for battery protection and reverse-polarity switching
• Ideal for low-current load switching in automotive modules
• Used with logic-level drivers in portable instrumentation
• Can be used for power-rail selection in compact control boards

What gate voltage limits should designers observe?

The gate-source rating is ±20V, so driver circuits must keep Vgs within that range to avoid device damage.

How does thermal performance influence PCB layout?

With 360mW dissipation, designers should provide adequate copper area and thermal vias to spread heat from the SOT-23 footprint.

Is this device suitable for automotive qualification?

The component meets AEC-Q101 standards, indicating it conforms to automotive-grade stress and screening levels.

What switching behaviour can be expected at high ambient temperatures?

The transistor remains operational from -55°C to 150°C, but RDS(on) and current capability should be verified at the upper temperature extreme for reliable operation.