Infineon OptiMOS 3 N-Channel MOSFET, 40 A, 40 V Enhancement, 8-Pin TSDSON BSZ097N04LSGATMA1
- RS-stocknr.:
- 754-5367
- Artikelnummer Distrelec:
- 304-45-305
- Fabrikantnummer:
- BSZ097N04LSGATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,36
(excl. BTW)
€ 7,69
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- 25.285 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,272 | € 6,36 |
| 50 - 120 | € 1,132 | € 5,66 |
| 125 - 245 | € 1,068 | € 5,34 |
| 250 - 495 | € 0,70 | € 3,50 |
| 500 + | € 0,574 | € 2,87 |
*prijsindicatie
- RS-stocknr.:
- 754-5367
- Artikelnummer Distrelec:
- 304-45-305
- Fabrikantnummer:
- BSZ097N04LSGATMA1
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Width | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Width 3.4mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, up to 40V
MOSFET Transistors, Infineon
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