Infineon OptiMOS 3 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-220 IPP200N25N3GXKSA1
- RS-stocknr.:
- 754-5500
- Fabrikantnummer:
- IPP200N25N3GXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 5,23
(excl. BTW)
€ 6,33
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 166 stuk(s) vanaf 06 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 5,23 |
| 5 - 9 | € 4,97 |
| 10 - 24 | € 4,48 |
| 25 - 49 | € 4,03 |
| 50 + | € 3,82 |
*prijsindicatie
- RS-stocknr.:
- 754-5500
- Fabrikantnummer:
- IPP200N25N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Width | 15.95 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 10.36mm | ||
Width 15.95 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon OptiMOS™ 3 N-Channel MOSFET 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 250 V, 3-Pin D2PAK IPB200N25N3GATMA1
- Infineon OptiMOS™-T N-Channel MOSFET 250 V, 3-Pin D2PAK IPB64N25S320ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 3-Pin TO-220 IPP023N04NGXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP052N06L3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 3-Pin TO-220 IPP042N03LGXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 3-Pin TO-220 IPP320N20N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 3-Pin TO-220 IPP126N10N3GXKSA1
