STMicroelectronics Single FDmesh 1 Type N, Type N-Channel MOSFET, 51 A, 600 V Enhancement, 3-Pin TO-247 STW55NM60ND
- RS-stocknr.:
- 761-0336
- Fabrikantnummer:
- STW55NM60ND
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,77
(excl. BTW)
€ 8,19
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 6,77 |
| 5 - 9 | € 6,59 |
| 10 - 24 | € 6,41 |
| 25 - 49 | € 6,25 |
| 50 + | € 6,10 |
*prijsindicatie
- RS-stocknr.:
- 761-0336
- Fabrikantnummer:
- STW55NM60ND
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | FDmesh | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Power Dissipation Pd | 350W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Forward Voltage Vf | 1.3V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Height | 20.15mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series FDmesh | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Power Dissipation Pd 350W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Forward Voltage Vf 1.3V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Height 20.15mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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