STMicroelectronics FDmesh N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60ND
- RS-stocknr.:
- 791-9285
- Fabrikantnummer:
- STD13NM60ND
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (5 eenheden, in een pakket van 5)*
€ 15,84
(excl. BTW)
€ 19,17
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 245 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,168 | € 15,84 |
| 50 - 120 | € 2,734 | € 13,67 |
| 125 + | € 2,198 | € 10,99 |
*prijsindicatie
- RS-stocknr.:
- 791-9285
- Fabrikantnummer:
- STD13NM60ND
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | FDmesh | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | -25V, +25V | |
| Typical Gate Charge Qg @ Vgs | 24.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 109W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.2mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series FDmesh | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs -25V, +25V | ||
Typical Gate Charge Qg @ Vgs 24.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 109W | ||
Maximum Operating Temperature 150°C | ||
Width 6.2mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
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