IXYS HiperFET, Polar3 N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3PN IXFQ34N50P3
- RS-stocknr.:
- 802-4455
- Fabrikantnummer:
- IXFQ34N50P3
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 7,72
(excl. BTW)
€ 9,34
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 7,72 |
| 2 - 4 | € 7,33 |
| 5 - 9 | € 6,96 |
| 10 - 14 | € 6,79 |
| 15 + | € 6,49 |
*prijsindicatie
- RS-stocknr.:
- 802-4455
- Fabrikantnummer:
- IXFQ34N50P3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | HiperFET, Polar3 | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 175 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 695 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Length | 15.8mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.9mm | |
| Height | 20.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 500 V | ||
Series HiperFET, Polar3 | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 175 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 695 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Length 15.8mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.9mm | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
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