IXYS HiperFET, Polar3 N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXFN132N50P3
- RS-stocknr.:
- 804-7599
- Fabrikantnummer:
- IXFN132N50P3
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 38,94
(excl. BTW)
€ 47,12
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 38,94 |
| 2 - 4 | € 32,83 |
| 5 - 9 | € 31,19 |
| 10 - 29 | € 30,30 |
| 30 + | € 29,51 |
*prijsindicatie
- RS-stocknr.:
- 804-7599
- Fabrikantnummer:
- IXFN132N50P3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 112 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | HiperFET, Polar3 | |
| Package Type | SOT-227 | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 39 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 1.5 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 25.07mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 250 nC @ 10 V | |
| Length | 38.23mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.6mm | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 112 A | ||
Maximum Drain Source Voltage 500 V | ||
Series HiperFET, Polar3 | ||
Package Type SOT-227 | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 39 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 1.5 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 25.07mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 250 nC @ 10 V | ||
Length 38.23mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.6mm | ||