Name: IXYS HiperFET, Polar3 N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXFN132N50P3
Brand: IXYS
SKU: 804-7599
Price: 47.12 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	IXYS
	Channel Type	N
	Maximum Continuous Drain Current	112 A
	Maximum Drain Source Voltage	500 V
	Series	HiperFET, Polar3
	Package Type	SOT-227
	Mounting Type	Screw Mount
	Pin Count	4
	Maximum Drain Source Resistance	39 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Maximum Power Dissipation	1.5 kW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	250 nC @ 10 V
	Length	38.23mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	25.07mm
	Height	9.6mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk IXYS
	Channel Type N
	Maximum Continuous Drain Current 112 A
	Maximum Drain Source Voltage 500 V
	Series HiperFET, Polar3
	Package Type SOT-227
	Mounting Type Screw Mount
	Pin Count 4
	Maximum Drain Source Resistance 39 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Maximum Power Dissipation 1.5 kW
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 250 nC @ 10 V
	Length 38.23mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 25.07mm
	Height 9.6mm
	Minimum Operating Temperature -55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXFN132N50P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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