Infineon SIPMOS Type P-Channel MOSFET, 11.3 A, 100 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
823-5560
Fabrikantnummer:
SPP15P10PLHXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

100V

Series

SIPMOS

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

128W

Forward Voltage Vf

-0.96V

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

15.95mm

Width

4.57 mm

Standards/Approvals

No

Length

10.36mm

Distrelec Product Id

304-44-485

Automotive Standard

AEC-Q101

Land van herkomst:
MY

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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