Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 124-8828
Fabrikantnummer:: SPP80P06PHXKSA1
Fabrikant:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 50 eenheden)*

€ 106,20

(excl. BTW)

€ 128,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

650 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 2,124	€ 106,20
100 - 200	€ 1,742	€ 87,10
250 +	€ 1,636	€ 81,80

*prijsindicatie

RS-stocknr.:: 124-8828
Fabrikantnummer:: SPP80P06PHXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	SIPMOS
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	23mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	340W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	115nC
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	175°C
	Height	15.95mm
	Width	4.57mm
	Standards/Approvals	No
	Length	10.36mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series SIPMOS
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 23mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 340W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 115nC
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 175°C
	Height 15.95mm
	Width 4.57mm
	Standards/Approvals No
	Length 10.36mm
	Automotive Standard No

Land van herkomst:: MY

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 80A Maximum Continuous Drain Current - SPP80P06PHXKSA1

This MOSFET is a power switching device designed for high-current, high-temperature applications. It operates as a p-channel enhancement transistor in a through-hole TO-220 package and is suitable for power conversion and switching tasks where robust thermal tolerance is required. The component supports gate-driven control for efficient conduction and is intended for use in systems demanding substantial continuous drain current and elevated operating temperatures.

Features and Benefits:

• 60V drain rating enables medium-voltage switching capability
• 80A continuous drain current supports high-current loads
• 23mΩ low Rds(on) minimises conduction losses
• 115nC typical gate charge balances switching and drive energy
• 340W maximum power dissipation permits substantial thermal loading
• Vgs±20V gate tolerance allows flexible gate-drive margins

Applications

• Suitable for high-current DC-DC converters in power supplies
• Used for synchronous rectification in server supply rails
• Ideal for motor-drive stages requiring P-channel switching
• Can be used for battery-protection and load-switch circuits
• Suitable for thermally stressed environments up to 175°C

What temperature range can it withstand in operation?

The device is rated to operate from -55°C up to 175°C, allowing use in high-temperature systems.

How should heat be managed when running near maximum dissipation?

To handle the 340W limit, attach an appropriate heatsink to the TO-220 tab and ensure adequate airflow to reduce junction temperature.

What gate-drive considerations arise from the gate charge value?

With a typical gate charge of 115nC, drivers must supply sufficient current for the desired switching speed while accounting for increased drive energy and potential switching losses.

How does the device’s polarity affect circuit topology choices?

As a P-channel enhancement device, it is typically deployed on the high side of power paths where the gate voltage can be pulled lower than the source for turn-on.