Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK IPB100N10S305ATMA1
- RS-stocknr.:
- 823-5649
- Fabrikantnummer:
- IPB100N10S305ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,20
(excl. BTW)
€ 8,72
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 3,60 | € 7,20 |
*prijsindicatie
- RS-stocknr.:
- 823-5649
- Fabrikantnummer:
- IPB100N10S305ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS 3 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 9.25mm | |
| Length | 10mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 135 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.4mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS 3 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.25mm | ||
Length 10mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 135 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.4mm | ||
- Land van herkomst:
- MY
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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