Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 40 V, 3-Pin D2PAK IPB90N04S402ATMA1
- RS-stocknr.:
- 857-4565
- Fabrikantnummer:
- IPB90N04S402ATMA1
- Fabrikant:
- Infineon
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 857-4565
- Fabrikantnummer:
- IPB90N04S402ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | OptiMOS™ -T2 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 9.25mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.4mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS™ -T2 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.25mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.4mm | ||
N.v.t.
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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