Infineon SIPMOS N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223 BSP324H6327XTSA1
- RS-stocknr.:
- 826-9257
- Artikelnummer Distrelec:
- 304-44-416
- Fabrikantnummer:
- BSP324H6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 50 eenheden)*
€ 38,35
(excl. BTW)
€ 46,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- Verzending vanaf 22 december 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 + | € 0,767 | € 38,35 |
*prijsindicatie
- RS-stocknr.:
- 826-9257
- Artikelnummer Distrelec:
- 304-44-416
- Fabrikantnummer:
- BSP324H6327XTSA1
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 25Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 4.54nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Width | 3.5mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 25Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 4.54nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Width 3.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 400V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP324H6327XTSA1
Features and Benefits:
• 25Ω maximum Rds(on) reduces conduction losses in low-current circuits
• 170mA continuous drain current supports small-signal power tasks
• 1.8W maximum power dissipation manages moderate thermal loads
• 4.54nC typical gate charge allows faster gate transitions with less drive energy
• 0.8V forward voltage improves diode drop efficiency in switching events
Applications
• Ideal for high-voltage control in power-supply snubber networks
• Used with gate drivers for low-current switching stages
• Can be used for load protection in sensing modules
• Appropriate for surface-mount assemblies in compact power designs
What temperature range can it operate across?
How many pins and what mounting style are offered?
What gate voltage limits must be observed during design?
What package footprint and external sizing should designers expect?
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