Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 826-9285
Fabrikantnummer:: BSS138NH6433XTMA1
Fabrikant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23

Subtotaal (1 rol van 500 eenheden)*

€ 33,50

(excl. BTW)

€ 40,50

(incl. BTW)

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Verzending 177.500 stuk(s) vanaf 01 september 2026

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Aantal stuks	Per stuk	Per rol*
500 +	€ 0,067	€ 33,50

*prijsindicatie

RS-stocknr.:: 826-9285
Fabrikantnummer:: BSS138NH6433XTMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1nC
	Forward Voltage Vf	0.83V
	Maximum Power Dissipation Pd	360mW
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.9mm
	Height	1mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1nC
	Forward Voltage Vf 0.83V
	Maximum Power Dissipation Pd 360mW
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.9mm
	Height 1mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 6Ω Maximum Drain Source Resistance - BSS138NH6327XTSA2

This MOSFET is a compact N-channel enhancement device designed for low-power switching in surface-mount assemblies. It operates reliably across a wide temperature span for demanding environments and is supplied in a three-pin SOT-23 package suitable for automated PCB assembly. Its configuration supports controlled gate-driven switching within common low-voltage systems.

Features and Benefits:

• 60V drain voltage rating enables higher-voltage switching
• 6Ω maximum RDS(on) minimises conduction losses in small-signal tasks
• 230mA continuous drain current supports low-current load control
• 360mW power dissipation handles modest thermal loads
• 1nC typical gate charge allows faster, efficient switching
• 20V maximum gate-source voltage prevents overdrive in drive circuits

Applications

• Suitable for automotive sensor interface circuits
• Ideal for battery management low-current switching
• Used for signal-level load disconnect in electronics
• Can be used for power sequencing in control modules
• Appropriate for temperature-stressed industrial electronics

What ambient temperatures can it be used in reliably?

It is rated for continuous operation from -55°C up to 150°C, accommodating extreme cold starts and elevated operating temperatures.

What mounting and package considerations should designers note?

The device is supplied in a SOT-23 surface-mount 3-pin package optimised for space-constrained PCBs and automated reflow soldering.

How does gate charge affect switching design?

With a typical gate charge of 1nC, gate driver requirements are modest, reducing required drive current and improving switching speed in low-energy applications.

What limits should be observed to avoid device stress?

Keep gate-source voltage within ±20V and ensure dissipation does not exceed 360mW under given thermal conditions to prevent overstress.