Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF

RS-stocknr.:: 830-3326
Fabrikantnummer:: IRLMS2002TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF

Subtotaal (1 verpakking van 30 eenheden)*

€ 11,52

(excl. BTW)

€ 13,95

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 780 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
30 +	€ 0,384	€ 11,52

*prijsindicatie

RS-stocknr.:: 830-3326
Fabrikantnummer:: IRLMS2002TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.5A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	Micro6
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	15nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Operating Temperature	150°C
	Width	1.75 mm
	Standards/Approvals	No
	Height	1.3mm
	Length	3mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.5A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type Micro6
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 15nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Operating Temperature 150°C
	Width 1.75 mm
	Standards/Approvals No
	Height 1.3mm
	Length 3mm
	Automotive Standard No

Vrijgesteld

Land van herkomst:: TH

Infineon HEXFET Series MOSFET, 6.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRLMS2002TRPBF

This N-channel MOSFET is designed for effective performance in battery management and load management applications. Its Ability to provide low on-resistance alongside high temperature resilience contributes to efficient operation across diverse electronic systems. With state-of-the-art processing techniques, this product is Ideal for professionals in the automation, electronics, and electrical sectors.

Features & Benefits

• Surface mount design minimises PCB space usage

• Low on-resistance enhances power efficiency

• Continuous drain current capability of up to 6.5A

• Supports ±12V gate-to-source voltage for flexible control

• Efficient thermal performance reduces heat generation

Applications

• Battery management for optimal energy distribution

• Load management in various electronic devices

• Automotive requiring robust power handling

• High-efficiency power supply systems

• Renewable energy systems for energy regulation

What is the maximum continuous drain current at elevated temperatures?

At a temperature of 70°C, a continuous drain current of 5.2A can be achieved while maintaining stability under specified conditions.

What is the thermal resistance for effective performance?

The maximum junction-to-ambient thermal resistance is 62.5°C/W, ensuring effective heat dissipation during operation.

How do I ensure optimum performance during installation?

Proper thermal management and careful consideration of PCB layout are essential for optimal performance, allowing for efficient heat dissipation and reliability.

What voltage can be applied without risking breakdown?

The maximum drain-source voltage is 20V, which serves as a critical threshold to prevent unnecessary breakdown during operation.

Is there a specific thermal derating factor to consider?

Yes, the linear derating factor is 0.016W/°C, indicating that power dissipation must be adjusted based on ambient temperature to maintain reliability.