Infineon HEXFET P-Channel MOSFET, 2.4 A, 20 V, 6-Pin Micro6 IRLMS6702TRPBF

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RS-stocknr.:
165-5821
Fabrikantnummer:
IRLMS6702TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

20 V

Series

HEXFET

Package Type

Micro6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

375 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.7V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.75mm

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

5.8 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1.3mm

Minimum Operating Temperature

-55 °C

Land van herkomst:
TH

P-Channel Power MOSFET 12V to 20V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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