Infineon HEXFET Type N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252 IRLR2905TRPBF

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Verpakkingsopties
RS-stocknr.:
830-3357
Fabrikantnummer:
IRLR2905TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

48nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Height

2.39mm

Width

6.22 mm

Distrelec Product Id

304-44-477

Automotive Standard

No

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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