Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC
- RS-stocknr.:
- 831-2869
- Fabrikantnummer:
- IRF7104TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 11,42
(excl. BTW)
€ 13,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 400 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,571 | € 11,42 |
| 200 - 480 | € 0,463 | € 9,26 |
| 500 - 980 | € 0,429 | € 8,58 |
| 1000 - 1980 | € 0,40 | € 8,00 |
| 2000 + | € 0,371 | € 7,42 |
*prijsindicatie
- RS-stocknr.:
- 831-2869
- Fabrikantnummer:
- IRF7104TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC IRF7104TRPBF
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 55 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7316TRPBF
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC