Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P4L06ATMA1

RS-stocknr.:: 857-4552
Fabrikantnummer:: IPB80P04P4L06ATMA1
Fabrikant:: Infineon

Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P4L06ATMA1

Bulkkorting beschikbaar

Subtotaal (1 rol van 1000 eenheden)*

€ 811,00

(excl. BTW)

€ 981,00

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per rol*
1000 - 1000	€ 0,811	€ 811,00
2000 - 4000	€ 0,79	€ 790,00
5000 +	€ 0,77	€ 770,00

*prijsindicatie

RS-stocknr.:: 857-4552
Fabrikantnummer:: IPB80P04P4L06ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	40 V
	Series	OptiMOS P
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	10.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	88 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Width	9.25mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	80 nC @ 10 V
	Number of Elements per Chip	1
	Length	10mm
	Height	4.4mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk Infineon
	Channel Type P
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 40 V
	Series OptiMOS P
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 10.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 88 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Width 9.25mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 80 nC @ 10 V
	Number of Elements per Chip 1
	Length 10mm
	Height 4.4mm
	Minimum Operating Temperature -55 °C

N.v.t.

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P4L06ATMA1

Infineon OptiMOS™P P-Channel Power MOSFETs

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