Infineon OptiMOS™-T N-Channel MOSFET, 50 A, 100 V, 3-Pin I2PAK IPI50N10S3L16AKSA1

RS-stocknr.:: 857-4685
Fabrikantnummer:: IPI50N10S3L16AKSA1
Fabrikant:: Infineon

Infineon OptiMOS™-T N-Channel MOSFET, 50 A, 100 V, 3-Pin I2PAK IPI50N10S3L16AKSA1

Bulkkorting beschikbaar

Subtotaal (1 tube van 500 eenheden)*

€ 484,00

(excl. BTW)

€ 585,50

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per tube*
500 - 2000	€ 0,968	€ 484,00
2500 - 4500	€ 0,921	€ 460,50
5000 +	€ 0,898	€ 449,00

*prijsindicatie

RS-stocknr.:: 857-4685
Fabrikantnummer:: IPI50N10S3L16AKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	50 A
	Maximum Drain Source Voltage	100 V
	Series	OptiMOS™-T
	Package Type	I2PAK (TO-262)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	29 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.4V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	100 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	4.4mm
	Maximum Operating Temperature	+175 °C
	Length	10mm
	Typical Gate Charge @ Vgs	49 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	9.25mm

	Alles selecteren
	Merk Infineon
	Channel Type N
	Maximum Continuous Drain Current 50 A
	Maximum Drain Source Voltage 100 V
	Series OptiMOS™-T
	Package Type I2PAK (TO-262)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 29 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.4V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 100 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Width 4.4mm
	Maximum Operating Temperature +175 °C
	Length 10mm
	Typical Gate Charge @ Vgs 49 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 9.25mm

N.v.t.

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS™-T N-Channel MOSFET, 50 A, 100 V, 3-Pin I2PAK IPI50N10S3L16AKSA1

Infineon OptiMOS™T Power MOSFETs

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