Infineon OptiMOS 3 Type N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-220 IPA086N10N3GXKSA1

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Verpakkingsopties
RS-stocknr.:
892-2125
Fabrikantnummer:
IPA086N10N3GXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

OptiMOS 3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

15.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

37.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

4.85 mm

Standards/Approvals

No

Length

10.65mm

Height

16.15mm

Automotive Standard

No

Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1


This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its Durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.

Features & Benefits


• N-channel configuration optimises current management

• Low on-resistance enhances overall system efficiency

• Operates at temperatures up to +175°C for adaptable applications

• Fully isolated package improves safety during operation

• Compliant with RoHS and halogen-free standards for eco-friendly use

Applications


• Ideal for high-frequency switching in electronic devices

• Employed in synchronous rectification to maximise efficiency

• Suitable for requiring high current handling

• Effective in temperature-sensitive environments due to robust thermal performance

What is the significance of the low on-resistance feature in this device?


The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.

Can this MOSFET be used in automotive applications?


Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.

How does the gate threshold voltage influence circuit function?


The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.

What types of circuits are most compatible with this power transistor?


This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.

How should the MOSFET be mounted for optimal performance?


The MOSFET should be mounted using the through-hole method to ensure secure connections and effective heat dissipation based on its thermal resistance specifications.

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