Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 80 V, 3-Pin TO-220 FP IPA028N08N3GXKSA1
- RS-stocknr.:
- 165-8119
- Fabrikantnummer:
- IPA028N08N3GXKSA1
- Fabrikant:
- Infineon
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 165-8119
- Fabrikantnummer:
- IPA028N08N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TO-220 FP | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-220 FP | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- CN
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