Infineon SIPMOS Type P-Channel MOSFET, 2.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP613PH6327XTSA1

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Verpakkingsopties
RS-stocknr.:
892-2236
Artikelnummer Distrelec:
304-44-417
Fabrikantnummer:
BSP613PH6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

10.8W

Maximum Operating Temperature

175°C

Width

40 mm

Height

1.5mm

Length

40mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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