Infineon SIPMOS Type P-Channel MOSFET, 430 mA, 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1

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RS-stocknr.:
753-2813
Fabrikantnummer:
BSP317PH6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

430mA

Maximum Drain Source Voltage Vds

250V

Series

SIPMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11.6nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.5mm

Height

1.6mm

Width

3.5 mm

Standards/Approvals

No

Distrelec Product Id

304-35-440

Automotive Standard

AEC-Q101

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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