Name: Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 IPP50R380CEXKSA1
Brand: Infineon
SKU: 892-2267
Price: 1.10 EUR
Availability: OutOfStock

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	14.1 A
	Maximum Drain Source Voltage	550 V
	Package Type	TO-220
	Series	CoolMOS™ CE
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	380 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	98 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	24.8 nC @ 10 V
	Length	10.36mm
	Width	4.57mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	0.85V
	Height	15.95mm

	Alles selecteren
	Merk Infineon
	Channel Type N
	Maximum Continuous Drain Current 14.1 A
	Maximum Drain Source Voltage 550 V
	Package Type TO-220
	Series CoolMOS™ CE
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 380 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 98 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 24.8 nC @ 10 V
	Length 10.36mm
	Width 4.57mm
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 0.85V
	Height 15.95mm

Infineon CoolMOS™ CE Series MOSFET, 14.1A Maximum Continuous Drain Current, 98W Maximum Power Dissipation - IPP50R380CEXKSA1

This MOSFET is tailored for high-voltage power applications, focusing on efficiency and dependability. Incorporating CoolMOS™ technology, it improves switching performance while minimising losses, making it advantageous for various industrial applications and significantly enhancing energy management.

Features & Benefits

• Low Rds(on) reduces conduction losses, which contributes to efficiency
• High continuous drain current rating accommodates rigorous applications
• Simplifies integration into existing systems due to easy drivability
• Flexible gate threshold voltage broadens compatibility with different circuits
• Sturdy package design ensures durability in challenging environments

Applications

• Suitable for power factor correction (PFC) stages
• Works well in hard-switching PWM stages
• Applicable in resonant switching for LCD and PDP televisions
• Effective in lighting for efficient power management
• Utilised in power supplies for PCs and automation systems

What is the optimal gate-source voltage for operation?

The MOSFET functions effectively with a maximum gate-source voltage of ±30 V, optimising control across various applications.

How does this component perform in thermal environments?

With a maximum power dissipation of 98 W, it operates efficiently between -55°C and +150°C, making it suitable for a range of thermal conditions.

Can this component handle pulsed currents?

It can manage pulse currents up to 32.4A, supporting transient conditions competently without compromising performance.

What advantages does the superjunction technology provide?

Superjunction technology lowers both switching and conduction losses, enhancing overall efficiency and extending device lifespan in applications.

Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 IPP50R380CEXKSA1