Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1
- RS-stocknr.:
- 130-0897
- Fabrikantnummer:
- IPD50R380CEAUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 8,00
(excl. BTW)
€ 9,70
(incl. BTW)
Voeg 100 eenheden toe voor gratis bezorging
Op voorraad
- 40 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 180 stuk(s) vanaf 18 februari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,80 | € 8,00 |
| 50 - 490 | € 0,762 | € 7,62 |
| 500 - 990 | € 0,55 | € 5,50 |
| 1000 - 2490 | € 0,456 | € 4,56 |
| 2500 + | € 0,445 | € 4,45 |
*prijsindicatie
- RS-stocknr.:
- 130-0897
- Fabrikantnummer:
- IPD50R380CEAUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.1A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Series | CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.8nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 98W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.1A | ||
Maximum Drain Source Voltage Vds 550V | ||
Series CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.8nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 98W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 4-Pin SOT-223
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 4-Pin SOT-223
- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252