Infineon OptiMOS 3 Type N-Channel MOSFET, 43 A, 100 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 892-2318
- Fabrikantnummer:
- IPP180N10N3GXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,11
(excl. BTW)
€ 11,02
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 150 stuk(s) vanaf 29 december 2025
- Plus verzending 500 stuk(s) vanaf 19 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 0,911 | € 9,11 |
| 20 - 40 | € 0,684 | € 6,84 |
| 50 - 90 | € 0,593 | € 5,93 |
| 100 - 190 | € 0,546 | € 5,46 |
| 200 + | € 0,50 | € 5,00 |
*prijsindicatie
- RS-stocknr.:
- 892-2318
- Fabrikantnummer:
- IPP180N10N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.57 mm | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.57 mm | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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