Infineon OptiMOS 3 Type N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-220

Subtotaal (1 tube van 50 eenheden)*

€ 297,00

(excl. BTW)

€ 359,50

(incl. BTW)

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  • Plus verzending 100 stuk(s) vanaf 29 december 2025
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50 +€ 5,94€ 297,00

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RS-stocknr.:
911-4899
Fabrikantnummer:
IPP110N20N3GXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

4.57 mm

Length

10.36mm

Height

9.45mm

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
DE

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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