Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23 BSS205NH6327XTSA1
- RS-stocknr.:
- 892-2374
- Fabrikantnummer:
- BSS205NH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 19,90
(excl. BTW)
€ 24,10
(incl. BTW)
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- Plus verzending 5.600 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,199 | € 19,90 |
| 500 - 900 | € 0,189 | € 18,90 |
| 1000 - 2400 | € 0,149 | € 14,90 |
| 2500 - 4900 | € 0,104 | € 10,40 |
| 5000 + | € 0,09 | € 9,00 |
*prijsindicatie
- RS-stocknr.:
- 892-2374
- Fabrikantnummer:
- BSS205NH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS 2 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.1 mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS 2 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Operating Temperature 150°C | ||
Width 0.1 mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1
This N-channel MOSFET is a VITAL component in contemporary electronic applications, especially in automation and automotive sectors. Designed for efficient switching applications, it features a Compact SOT-23 surface mount package. Its capacity to handle significant drain currents and voltages makes it suitable for industrial and automotive contexts, ensuring consistent performance.
Features & Benefits
• Maximum continuous drain current of 2.5A
• Maximum drain-source voltage of 20V
• Minimal Rds(on) of 85 mΩ enhances power efficiency
• Qualified to AEC-Q101 for automotive applications
Applications
• Used in automotive power management systems
• Suitable for DC-DC converters in electronic devices
• Employed in motor control for efficient switching
• Ideal for power amplification in RF
What kind of protection does this offer against voltage spikes?
It is avalanche rated and can handle high energy pulses, providing protection in dynamic environments.
What is the significance of the low Rds(on) in this device?
A low on-state resistance improves power loss management and enhances efficiency, making it suitable for high-efficiency applications.
How can this be installed on a circuit board?
It can be soldered onto a PCB in the SOT-23 package, ensuring secure mounting for surface-mount technology applications.
What are the typical switching characteristics at the rated voltage?
The device displays quick turn-on and turn-off times, improving switching efficiency in high-speed applications.
Is this compatible with other components in automotive circuits?
Yes, it meets automotive standards and functions effectively with various devices in power management circuits.
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