Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB

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€ 53,80

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€ 65,10

(incl. BTW)

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50 - 50€ 1,076€ 53,80
100 - 200€ 0,95€ 47,50
250 - 450€ 0,926€ 46,30
500 - 950€ 0,902€ 45,10
1000 +€ 0,879€ 43,95

*prijsindicatie

RS-stocknr.:
913-3837
Fabrikantnummer:
IRF1404PBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

202A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220AB

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.004Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

131nC

Maximum Power Dissipation Pd

333W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

8.77mm

Length

10.67mm

Width

4.83 mm

Automotive Standard

No

Land van herkomst:
CN

Infineon HEXFET Series MOSFET, 202A Maximum Continuous Drain Current, 333W Maximum Power Dissipation - IRF1404PBF


This power MOSFET is designed for high efficiency and dependability across various applications, making it important for professionals in automation, electronics, and electrical engineering. The advanced processing techniques used ensure minimal on-resistance and a wide operational temperature range, broadening its applicability.

Features & Benefits


• Continuous drain current of 202A supports robust performance

• Low Rds(on) of 4mΩ enhances energy efficiency

• Rapid switching capabilities improve overall performance

• Capable of operating at high temperatures, reaching up to 175°C

• Employs Si MOSFET technology for effective thermal management

• Comes in a TO-220AB package for straightforward mounting

Applications


• Employed in industrial automation systems for efficient power switching

• Suitable for high current motor controls and drives

• Ideal for power supply prioritising efficiency

• Utilised in renewable energy systems for effective power management

What type of voltage can be managed?


The device can support voltage levels up to 40V between the drain and source, offering versatility for various voltage regulation applications.

How does its low on-resistance impact system efficiency?


The low Rds(on) significantly reduces power loss during operation, leading to improved system efficiency by minimising energy waste.

What temperatures can it withstand during operation?


It is designed to function efficiently within a temperature range of -55°C to +175°C, making it appropriate for challenging environments.

Can it handle pulsed drain currents?


Yes, it can accommodate pulsed drain currents up to 808A, which provides flexibility for different application needs.

What is the significance of the TO-220AB package?


The TO-220AB package facilitates effective heat dissipation and convenient mounting, suitable for both commercial and industrial uses.

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