Infineon HEXFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252

RS-stocknr.:: 913-4795
Fabrikantnummer:: IRFR9120NTRPBF
Fabrikant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252

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Subtotaal (1 rol van 2000 eenheden)*

€ 818,00

(excl. BTW)

€ 990,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 01 januari 2027

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Aantal stuks	Per stuk	Per rol*
2000 - 2000	€ 0,409	€ 818,00
4000 +	€ 0,389	€ 778,00

*prijsindicatie

RS-stocknr.:: 913-4795
Fabrikantnummer:: IRFR9120NTRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	6.6A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	480mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	40W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.6V
	Typical Gate Charge Qg @ Vgs	27nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Width	6.22mm
	Standards/Approvals	No
	Height	2.39mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 6.6A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 480mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 40W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.6V
	Typical Gate Charge Qg @ Vgs 27nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Width 6.22mm
	Standards/Approvals No
	Height 2.39mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 6.6A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - IRFR9120NTRPBF

This MOSFET plays a vital role in contemporary electronic circuits, especially in applications that require efficient current management. It is characterised by its ability to deliver high performance and low on-resistance, making it suitable for a wide range of electrical and electronic systems. This device is tailored to meet the requirements of sectors such as automation, electrical engineering, and other areas dependent on power management solutions.

Features & Benefits

• High continuous drain current rating of 6.6A supports effective operation

• Capable of managing voltages up to 100V for demanding applications

• Designed in DPAK TO-252 package for precise surface mounting

• Low maximum drain-source resistance of 480mΩ improves power efficiency

• Provides a gate threshold voltage range of 2V to 4V for dependable control

• Supports enhancement mode operation to enhance switching performance

Applications

• Utilised for power management in automation systems

• Employed in DC-DC converter designs

• Suitable for high current switching in industrial equipment

• Integrated into power supply circuits for efficient performance

• Applicable in inverter circuits and motor control

What is the optimal operating temperature for this product?

The optimal operating temperature ranges from -55°C to +150°C, allowing efficient performance in various environments.

How can the gate threshold voltage influence performance?

The maximum gate threshold voltage impacts switching behaviour; the defined range of 2V to 4V ensures reliable on/off conditions.

Is there a specific method for mounting this device?

It is designed for surface mount applications, particularly within the DPAK TO-252 footprint, facilitating integration into PCB layouts.

What does the low RDS(on) mean for my circuit?

A low RDS(on) helps minimise power loss during operation, enhancing overall system efficiency and reducing heat generation.

Can this product handle reverse current?

Yes, it possesses characteristics suitable for effectively managing reverse currents, ensuring stability in various applications.