IXYS Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 IXFH34N65X2
- RS-stocknr.:
- 917-1467
- Fabrikantnummer:
- IXFH34N65X2
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 12,92
(excl. BTW)
€ 15,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 198 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 6,46 | € 12,92 |
| 10 - 28 | € 5,815 | € 11,63 |
| 30 - 88 | € 5,18 | € 10,36 |
| 90 - 178 | € 4,95 | € 9,90 |
| 180 + | € 4,72 | € 9,44 |
*prijsindicatie
- RS-stocknr.:
- 917-1467
- Fabrikantnummer:
- IXFH34N65X2
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 540W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.45 mm | |
| Length | 16.24mm | |
| Height | 5.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-37-851 | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 540W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 21.45 mm | ||
Length 16.24mm | ||
Height 5.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-37-851 | ||
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS HiperFET 34 A 3-Pin TO-247 IXFH34N65X2
- IXYS HiperFET 46 A 3-Pin TO-247 IXFH46N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH34N65X2
- IXYS HiperFET 22 A 3-Pin D2PAK IXFA22N65X2
- IXYS HiperFET 100 A 3-Pin TO-264P IXFK100N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH80N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH62N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH48N65X2