IXYS Type N-Channel MOSFET, 100 A, 650 V Enhancement, 3-Pin TO-264 IXFK100N65X2

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Verpakkingsopties
RS-stocknr.:
917-1429
Artikelnummer Distrelec:
302-53-341
Fabrikantnummer:
IXFK100N65X2
Fabrikant:
IXYS
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Merk

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

183nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.04kW

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

5.3mm

Standards/Approvals

No

Width

26.3 mm

Length

20.3mm

Automotive Standard

No

Distrelec Product Id

30253341

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series


The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Fast intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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