Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4842
Fabrikantnummer:: IRF530NPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 42,30

(excl. BTW)

€ 51,20

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending 50 stuk(s) vanaf 02 september 2026
Plus verzending 2.000 stuk(s) vanaf 31 december 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,846	€ 42,30
100 - 200	€ 0,651	€ 32,55
250 - 450	€ 0,609	€ 30,45
500 - 1200	€ 0,567	€ 28,35
1250 +	€ 0,525	€ 26,25

*prijsindicatie

RS-stocknr.:: 919-4842
Fabrikantnummer:: IRF530NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	37nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	70W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Width	4.69mm
	Standards/Approvals	No
	Length	10.54mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 37nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 70W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Width 4.69mm
	Standards/Approvals No
	Length 10.54mm
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 70W Maximum Power Dissipation - IRF530NPBF

This high power MOSFET is designed for efficient switching applications, offering robust performance across various environments. Its N-channel enhancement mode configuration makes it suitable for numerous electronic and electrical applications where effective current management is crucial. The key specifications position it as an important component in modern automation and control systems.

Features & Benefits

• Low on-resistance of 90mΩ enhances efficiency

• Maximum drain current handling of 17A

• Operating temperature range from -55°C to +175°C

• Fast switching speed reduces energy losses

• Robust design improves reliability under load

• Versatile TO-220AB package facilitates easy integration

Applications

• Power management in industrial automation

• Integration in motor control circuits

• Utilisation in power supply systems for voltage regulation

• Application in high-efficiency converters and inverters

• Suitable for consumer electronics requiring dynamic load support

Is there a specific gate voltage required for optimal operation?

The device operates effectively with a gate-source voltage range of -20V to +20V, ensuring reliable switching functionality.

What is the maximum pulse drain current capability of this device?

The maximum pulsed drain current is rated at 60A, allowing for transient conditions without compromising device integrity.

How do thermal resistance values affect performance?

With a junction-to-case thermal resistance of 2.15°C/W, effective heat dissipation is vital for maintaining performance during high load operation.

What considerations should I have for soldering this component?

The recommended soldering temperature is 300°C for a duration of 10 seconds. It is important to adhere to this guideline to prevent damage.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.