Name: Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220 IRFI3205PBF
Brand: Infineon
SKU: 124-8986
Price: 2.72 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.036Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.75mm
	Height	9.8mm
	Width	4.83 mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.036Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.75mm
	Height 9.8mm
	Width 4.83 mm
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 63W Maximum Power Dissipation - IRFI3205PBF

This MOSFET is suited for high-efficiency applications, offering a solution for various electronic and electrical systems. With Advanced processing, it is effective in power management and switching tasks, serving as a key component in contemporary designs. Its enhancement mode technology ensures consistent performance across diverse operational conditions.

Features & Benefits

• Continuous drain current capability of 64A supports high-performance applications

• 55V drain-source voltage improves circuit reliability

• Low on-resistance of 8mΩ decreases power loss

• Quick switching speeds enhance efficiency in high-frequency applications

• Maximum power dissipation rated at 63W supports effective thermal management

• TO-220 package design allows straightforward installation in various setups

Applications

• Utilised in power supplies for efficient energy conversion

• Suitable for DC-DC converters managing high currents

• Ideal for motor control requiring Rapid switching

• Employed in inverter circuits within renewable energy systems

• Used in electric vehicle power management systems

How does the low on-resistance benefit performance?

The low on-resistance reduces heat loss, increasing efficiency and ensuring more energy is available for the load instead of being wasted as heat.

What is the optimal gate voltage for efficient operation?

An optimal gate voltage of 10V ensures maximum conduction, confirming reliable operation in high current applications.

Can this component handle pulsed currents?

Yes, it is rated for pulsed drain currents up to 390A, making it suitable for transient demand applications.

What temperature range can it operate within?

It functions effectively across a wide temperature range of -55°C to +175°C, accommodating various environmental conditions.

Is this product compatible with standard PCB mounting?

Yes, its TO-220 package design ensures compatibility with conventional through-hole PCB mounting practices.

Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220 IRFI3205PBF