Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

RS-stocknr.:: 919-4873
Fabrikantnummer:: IRFP150NPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

Bulkkorting beschikbaar

Subtotaal (1 tube van 25 eenheden)*

€ 39,775

(excl. BTW)

€ 48,125

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

600 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
25 - 25	€ 1,591	€ 39,78
50 - 100	€ 1,512	€ 37,80
125 - 225	€ 1,448	€ 36,20
250 - 600	€ 1,384	€ 34,60
625 +	€ 1,289	€ 32,23

*prijsindicatie

RS-stocknr.:: 919-4873
Fabrikantnummer:: IRFP150NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	36mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	160W
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	5.3 mm
	Height	20.3mm
	Length	15.9mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 36mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 160W
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 5.3 mm
	Height 20.3mm
	Length 15.9mm
	Standards/Approvals No
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF

This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.

Features & Benefits

• Maximum continuous drain current of 42A

• Maximum drain-source voltage of 100V

• Low Rds(on) of 36mΩ for enhanced efficiency

• Maximum power dissipation of 160W

• Utilises enhancement mode for improved operation

• Integrated in a TO-247AC package for straightforward mounting

Applications

• Utilised in power supply circuits for automation devices

• Suitable for motor control in industrial machinery

• Employed in renewable energy systems for effective power conversion

• Applicable for high-frequency switching in telecommunications

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.

What is the maximum gate-source voltage it can handle?

The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.

How does the low Rds(on) benefit performance?

A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.

Is it suitable for through-hole mounting?

Yes, the TO-247AC package is specifically intended for through-hole mounting applications.

What considerations should be taken during installation?

Ensure the device is adequately cooled during operation to maintain optimal performance and prevent overheating.