Infineon HEXFET N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247

RS-stocknr.:: 919-5019
Fabrikantnummer:: IRFP260NPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 25 eenheden)*

€ 69,90

(excl. BTW)

€ 84,58

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

575 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 400 stuk(s) vanaf 22 oktober 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
25 - 25	€ 2,796	€ 69,90
50 - 100	€ 2,656	€ 66,40
125 - 225	€ 2,544	€ 63,60
250 - 475	€ 2,433	€ 60,83
500 +	€ 2,265	€ 56,63

*prijsindicatie

RS-stocknr.:: 919-5019
Fabrikantnummer:: IRFP260NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	300W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	234nC
	Maximum Operating Temperature	175°C
	Width	5.3mm
	Length	15.9mm
	Standards/Approvals	No
	Height	20.3mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 300W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 234nC
	Maximum Operating Temperature 175°C
	Width 5.3mm
	Length 15.9mm
	Standards/Approvals No
	Height 20.3mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF

This MOSFET is intended for high-power applications, delivering efficiency and reliability across various electronic systems. With its enhancement mode design and robust current handling capabilities, it plays a crucial role in optimising circuit performance while effectively managing thermal dissipation.

Features & Benefits

• Supports continuous drain currents up to 50A for strong performance

• Operates efficiently with a maximum drain-source voltage of 200V

• Enhancement mode design offers improved control and versatility

• Low Rds(on) of 40mΩ reduces energy losses

• Designed for through-hole mounting, facilitating easy installation

Applications

• Utilised in power supply circuits for managing high currents

• Suitable for automotive requiring durable electronic components

• Applied in industrial equipment for effective power control

• Commonly found in renewable energy systems to enhance efficiency

What is the maximum power dissipation for this component?

The power dissipation can reach up to 300W, ensuring efficient performance in high-load conditions.

How does the low Rds(on) benefit circuit efficiency?

The low Rds(on) of 40mΩ significantly reduces conduction losses, enhancing overall efficiency and minimising heat generation during operation.

What are the advantages of using this MOSFET in power applications?

This MOSFET provides high continuous drain current and operates effectively across a wide temperature range, making it suitable for power applications.

Is it easy to install with other components in a circuit?

The through-hole mounting type simplifies integration into various circuit designs, allowing for straightforward assembly with existing components.

How does the enhance mode design affect performance?

The enhancement mode design ensures that the device conducts only when sufficient gate voltage is applied, improving switching efficiency and reducing unwanted current flow during inactive periods.