Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

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Subtotaal (1 tube van 25 eenheden)*

€ 95,20

(excl. BTW)

€ 115,20

(incl. BTW)

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Laatste voorraad RS
  • Laatste 1.100 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks
Per stuk
Per tube*
25 - 25€ 3,808€ 95,20
50 - 100€ 3,617€ 90,43
125 +€ 3,465€ 86,63

*prijsindicatie

RS-stocknr.:
217-2594
Fabrikantnummer:
IRF200P223
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

313W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

55nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

34.9mm

Width

5.31 mm

Length

15.87mm

Standards/Approvals

No

Automotive Standard

No

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Pb-Free ; RoHS Compliant ; Halogen-Free

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