Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-5025
Fabrikantnummer:: IRF630NPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220

Bulkkorting beschikbaar

Subtotaal (1 tube van 50 eenheden)*

€ 39,55

(excl. BTW)

€ 47,85

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

250 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 550 stuk(s) vanaf 06 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,791	€ 39,55
100 - 200	€ 0,625	€ 31,25
250 - 450	€ 0,585	€ 29,25
500 - 1200	€ 0,546	€ 27,30
1250 +	€ 0,506	€ 25,30

*prijsindicatie

RS-stocknr.:: 919-5025
Fabrikantnummer:: IRF630NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.3A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	82W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Length	10.54mm
	Height	8.77mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.3A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 82W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Length 10.54mm
	Height 8.77mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications

• Efficient design lowers thermal resistance for effective cooling

• Fast switching speeds improve performance in dynamic systems

• Simple drive requirements aid in circuit integration

• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation

• Employed in motor control systems for efficient functionality

• Ideal for DC-DC converters and power management circuits

• Used in HVAC systems to control compressor motors

• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.