Infineon HEXFET N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF

RS-stocknr.:: 145-8608
Fabrikantnummer:: IRFB4020PBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 55,35

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€ 66,95

(incl. BTW)

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,107	€ 55,35
100 - 200	€ 0,896	€ 44,80
250 - 450	€ 0,841	€ 42,05
500 - 950	€ 0,786	€ 39,30
1000 +	€ 0,719	€ 35,95

*prijsindicatie

RS-stocknr.:: 145-8608
Fabrikantnummer:: IRFB4020PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	100W
	Typical Gate Charge Qg @ Vgs	18nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.82mm
	Height	9.02mm
	Length	10.66mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 100W
	Typical Gate Charge Qg @ Vgs 18nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.82mm
	Height 9.02mm
	Length 10.66mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - IRFB4020PBF

This MOSFET is a power-switching transistor designed for high-voltage, high-current applications where robust thermal endurance is required. It operates as an N-channel enhancement device in a through-hole TO-220 package, providing a practical solution for discrete power stages and board-mounted switching circuits across a wide temperature range.

Features and Benefits:

• 200V drain rating enables high-voltage switching applications
• 18A continuous drain current supports substantial load currents
• 100W power dissipation permits elevated power handling
• 100 mΩ Rds(on) minimises conduction losses under load
• 18 nC typical gate charge yields faster switching transitions
• 1.3V forward voltage lowers diode conduction drop during recovery

Applications

• Suitable for motor-drive half-bridge stages
• Ideal for offline switch-mode power supplies
• Used with power converters requiring through-hole mounting
• Can be used for high-voltage relay and solenoid drivers
• Appropriate for laboratory prototypes and bench power experiments

What gate-voltage limits should designers observe for safe operation?

The gate-source voltage must not exceed ±20V to avoid damaging the gate oxide and to maintain reliable switching behaviour.

How does the device perform across temperature extremes?

It is rated to operate from -55 °C up to 175 °C, allowing use in environments with wide thermal variation while maintaining specified electrical characteristics.

What package considerations affect PCB layout and cooling?

The TO-220 through-hole form factor provides a single insulated mounting tab and allows direct attachment to a heatsink or chassis for improved thermal management.

How does the body diode influence switching-topology choice?

The intrinsic diode with a 1.3V forward drop should be accounted for in designs with reverse-recovery events to manage dissipation and determine snubber requirements.