DiodesZetex Isolated 2 Type N-Channel MOSFET, 10 A, 20 V Enhancement, 6-Pin WDFN DMN2013UFX-7
- RS-stocknr.:
- 921-1050
- Fabrikantnummer:
- DMN2013UFX-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 8,68
(excl. BTW)
€ 10,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,434 | € 8,68 |
| 100 - 480 | € 0,397 | € 7,94 |
| 500 - 980 | € 0,388 | € 7,76 |
| 1000 - 2480 | € 0,378 | € 7,56 |
| 2500 + | € 0,367 | € 7,34 |
*prijsindicatie
- RS-stocknr.:
- 921-1050
- Fabrikantnummer:
- DMN2013UFX-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | WDFN | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -8/8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.14W | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Height | 0.8mm | |
| Width | 5.1 mm | |
| Number of Elements per Chip | 2 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type WDFN | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -8/8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.14W | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Height 0.8mm | ||
Width 5.1 mm | ||
Number of Elements per Chip 2 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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