Infineon EB 2ED2410 3M MOSFET for Gate Driver, Power MOSFET for Adjustable Wire Protection
- RS-stocknr.:
- 273-2062
- Fabrikantnummer:
- EB2ED24103MTOBO1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 73,79
(excl. BTW)
€ 89,29
(incl. BTW)
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- Plus verzending 2 stuk(s) vanaf 22 december 2025
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 73,79 |
| 5 - 9 | € 70,10 |
| 10 + | € 68,24 |
*prijsindicatie
- RS-stocknr.:
- 273-2062
- Fabrikantnummer:
- EB2ED24103MTOBO1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Power Management Function | MOSFET | |
| For Use With | Adjustable Wire Protection | |
| Kit Classification | Evaluation Board | |
| Featured Device | Gate Driver, Power MOSFET | |
| Kit Name | EB 2ED2410 3M | |
| Standards/Approvals | RoHS | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Power Management Function MOSFET | ||
For Use With Adjustable Wire Protection | ||
Kit Classification Evaluation Board | ||
Featured Device Gate Driver, Power MOSFET | ||
Kit Name EB 2ED2410 3M | ||
Standards/Approvals RoHS | ||
273-2062
This evaluation motherboard contains the ISO26262-ready 2ED2410-EM MOSFET gate driver with adjustable I-t wire protection for automotive power distribution with adjustable I-t wire protection. This board is suitable for 12 V and 24 V board nets and contains the OPTIREGTM TLE4296GV50 low drop voltage regulator for providing the 5 V digital supply voltage on this board. With the help of a push button the gate driver can be reset, e.g. from a Safestate mode back to Idle mode or On mode. This board can be used with different daughterboards, which have different OptiMOSTM5 power MOSFET arrangements with and without a dedicated pre-charge path intended for one load channel:
•EB 2ED2410 3D 1BCS:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCSP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with different MOSFET plus shunt daughterboards
•Support of daughterboards with dedicated pre-charge path
•Overcurrent protection with adjustable thresholds
•Adjustable I-t wire protection
•Indicator LEDs
•RESET possibility
Gerelateerde Links
- Infineon EB 2ED2410 3D 1BCDP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
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- Infineon EB 2ED2410 3D 1BCD MOSFET Gate Driver for Gate Driver, Power MOSFET for Evaluation Mother/Daughterboards User
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