BGA725L6E6327FTSA1 Infineon RF Amplifier Low Noise 20 dB, 6-Pin 1615MHz TSLP
- RS-stocknr.:
- 258-0663
- Fabrikantnummer:
- BGA725L6E6327FTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 2,81
(excl. BTW)
€ 3,40
(incl. BTW)
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,281 | € 2,81 |
| 100 - 240 | € 0,268 | € 2,68 |
| 250 - 490 | € 0,256 | € 2,56 |
| 500 - 990 | € 0,245 | € 2,45 |
| 1000 + | € 0,228 | € 2,28 |
*prijsindicatie
- RS-stocknr.:
- 258-0663
- Fabrikantnummer:
- BGA725L6E6327FTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Operating Frequency | 1615MHz | |
| Amplifier Type | Low Noise | |
| Product Type | RF Amplifier | |
| Technology | Silicon Germanium | |
| Mount Type | Surface | |
| Gain | 20dB | |
| Package Type | TSLP | |
| Minimum Supply Voltage | 1.5V | |
| Pin Count | 6 | |
| Maximum Supply Voltage | 3.6V | |
| P1dB - Compression Point | 72mW | |
| Third Order Intercept OIP3 | -5dBm | |
| Noise Figure | 0.65dB | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Series | BGA | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Operating Frequency 1615MHz | ||
Amplifier Type Low Noise | ||
Product Type RF Amplifier | ||
Technology Silicon Germanium | ||
Mount Type Surface | ||
Gain 20dB | ||
Package Type TSLP | ||
Minimum Supply Voltage 1.5V | ||
Pin Count 6 | ||
Maximum Supply Voltage 3.6V | ||
P1dB - Compression Point 72mW | ||
Third Order Intercept OIP3 -5dBm | ||
Noise Figure 0.65dB | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Series BGA | ||
Automotive Standard No | ||
Infineon BGA Series RF Amplifier, 20dB Gain, 1615MHz Operating Frequency - BGA725L6E6327FTSA1
This RF amplifier is a low-noise silicon-germanium device designed for surface-mount applications operating around 1615MHz. It amplifies weak signals while functioning across a broad supply range and is suited to systems requiring Compact packaged radio-frequency gain in commercial temperature environments.
Features and Benefits:
• 20dB gain improves weak-signal reception and link margin
• 0.65dB noise figure reduces added system noise floor
• 1.5V to 3.6V supply range enables flexible powering options
• P1dB 72 mW output prevents early saturation under drive
• OIP3 -5 dBm linearity preserves signal fidelity at high levels
• 0.65dB noise figure reduces added system noise floor
• 1.5V to 3.6V supply range enables flexible powering options
• P1dB 72 mW output prevents early saturation under drive
• OIP3 -5 dBm linearity preserves signal fidelity at high levels
Applications
• Suitable for front-end receiver stages in RF modules
• Ideal for satellite communication downlink receivers
• Used with surface-mount transceiver assemblies on Compact boards
• Can be used for signal conditioning in telemetry links
• Applicable to gain stages in wireless infrastructure equipment
• Ideal for satellite communication downlink receivers
• Used with surface-mount transceiver assemblies on Compact boards
• Can be used for signal conditioning in telemetry links
• Applicable to gain stages in wireless infrastructure equipment
What thermal limits should be considered for operation?
The device operates between -40°C and 85°C, so thermal management should maintain junction temperature within this range.
How many connections are required on the PCB footprint?
The component uses a 6‑pin surface-mount package, requiring six solder pads for electrical and mechanical attachment.
What fabrication technology defines its semiconductor behaviour?
It employs silicon-germanium technology, which provides RF performance characteristics suitable for low-noise amplification.
Is the product compliant with environmental material standards?
It meets RoHS requirements restricting certain hazardous substances in electronic assemblies.
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