BGA7L1BN6E6327XTSA1 Infineon RF Amplifier Low Noise 13.6 dB, 6-Pin 960MHz TSNP-6-2
- RS-stocknr.:
- 273-5225
- Fabrikantnummer:
- BGA7L1BN6E6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 15000 eenheden)*
€ 3.570,00
(excl. BTW)
€ 4.320,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 15000 + | € 0,238 | € 3.570,00 |
*prijsindicatie
- RS-stocknr.:
- 273-5225
- Fabrikantnummer:
- BGA7L1BN6E6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Amplifier Type | Low Noise | |
| Product Type | RF Amplifier | |
| Technology | Silicon Germanium | |
| Gain | 13.6dB | |
| Mount Type | Surface | |
| Package Type | TSNP-6-2 | |
| Minimum Supply Voltage | 1.5V | |
| Pin Count | 6 | |
| Maximum Supply Voltage | 3.6V | |
| Third Order Intercept OIP3 | 5dBm | |
| Noise Figure | 0.75dB | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Height | 0.37mm | |
| Length | 1.1mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BGA7L1BN6 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Amplifier Type Low Noise | ||
Product Type RF Amplifier | ||
Technology Silicon Germanium | ||
Gain 13.6dB | ||
Mount Type Surface | ||
Package Type TSNP-6-2 | ||
Minimum Supply Voltage 1.5V | ||
Pin Count 6 | ||
Maximum Supply Voltage 3.6V | ||
Third Order Intercept OIP3 5dBm | ||
Noise Figure 0.75dB | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Height 0.37mm | ||
Length 1.1mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BGA7L1BN6 | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon RF Amplifier is a front end low noise amplifier for LTE which covers a wide frequency range from 716 MHz to 960 MHz. The LNA provides 13.6 dB gain and 0. 75 dB noise figure at a current consumption of 4.9 mA. This RF amplifier is base on Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single line two state control and OFF state can be enabled by powering down Vcc.
Pb free package
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
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